Photo Transistor

₹5.00

Specification

dimension: 15x8x4 inches
availability: In Stock
breakdown voltage: 5 V
collector current: 25 mA
fall time 90 to 10: 5 microS
saturation voltage: 0.4 V Rise Time (10 to 90%): 5 microS
free air temperature: 100 mW
dark current vce 15 v: 100 nA Light Current (Vce = 5 V, H = 20 mW/cm): 20 nA Collector to Emitter
operating temperature range: -40 to +85 Degrees C
relative humidity at 85 degrees c: 85% Power Dissipation at or below 25 Degrees C
soldering temperature 1 16 inch from case for 5 sec: 240 Degrees C

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Description

The phototransistor is a device that operates by converting incoming photons to electrons in the base of a bipolar transistor. As for any such transistor, the base current causes a larger collector-emitter current to flow, which is detected by a circuit.

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